121 citations · 151 across the 7 of their papers we have counts for
7 papers
Dielectric environment sensitivity of carbon centres in hexagonal boron nitride
Danis I. Badrtdinov, Carlos Rodriguez-Fernandez, Magdalena Grzeszczyk +11
A key advantage of utilizing van der Waals materials as defect-hosting platforms for quantum applications is the controllable proximity of the defect to the surface or the substrat…
Atomically-precise Vacancy-assembled Quantum Antidots
Hanyan Fang, Harshitra Mahalingam, Xinzhe Li +16
Patterning antidots ("voids") into well-defined antidot lattices creates an intriguing class of artificial structures for the periodic modulation of 2D electron systems, leading to…
Giant gate-tunable renormalization of spin-correlated flat-band states and bandgap in a 2D magnetic insulator
Pin Lyu, Joachim Sødequist, Xiaoyu Sheng +8
Emergent quantum phenomena in two-dimensional van der Waal (vdW) magnets are largely governed by the interplay between the exchange and Coulomb interactions. The ability to tune th…
Gate-tunable artificial nucleus in graphene
Mykola Telychko, Keian Noori, Hillol Biswas +12
We report an atomically-precise integration of individual nitrogen (N) dopant as an in-plane artificial nucleus in a graphene device by atomic implantation to probe its gate-tunabl…
Atomic and electronic structure of defects in hBN: enhancing single-defect functionalities
Z. Qiu, K. Vaklinova, P. Huang +7
Defect centers in insulators play a critical role in creating important functionalities in materials: prototype qubits, single-photon sources, magnetic field probes, and pressure s…
Electronic Self-passivation of Single Vacancy in Black Phosphorus via a Controlled Ionization
Hanyan Fang, Aurelio Gallardo, Dikshant Dulal +11
We report that mono-elemental black phosphorus presents a new electronic self-passivation scheme of single vacancy (SV). By means of low-temperature scanning tunneling microscopy a…
Defects controlled hole doping and multi-valley transport in SnSe single crystals
Zhen Wang, Congcong Fan, Zhixuan Shen +10
SnSe is a promising thermoelectric material with record-breaking figure of merit, \textit{i.e., ZT}. As a semiconductor, optimal electrical dosage is the key challenge to maximize…