182 citations · 504 across the 15 of their papers we have counts for
3 papers · 1 filter
Improving feature resolution and pore back effect in focused ion beam tomography of porous GaN thin films
Ben Thornley, Thom R. Harris-Lee, Menno J. Kappers +2
Porous gallium nitride (GaN) is a mesoporous crystalline material, typically in the form of a thin film on an unlike substrate, prepared by electrochemically etching conductive GaN…
A stochastic simulation of the dislocation-mediated etching of porous GaN distributed Bragg reflectors
Piotr Sokolinski, Ben Thornley, Zetai Xu +3
Distributed Bragg reflectors (DBRs) can be fabricated by electrochemically etching nitride epitaxial structures consisting of alternating layers of highly n-type doped and non-inte…
Controlled epitaxy of room-temperature quantum emitters in gallium nitride
Katie M. Eggleton, Joseph K. Cannon, Sam G. Bishop +5
The ability to generate quantum light at room temperature on a mature semiconductor platform opens up new possibilities for quantum technologies. Heteroepitaxial growth of gallium…