activity
20102026
most citedCarrier localization mechanisms in InGaN/GaN quantum wells

182 citations · 504 across the 15 of their papers we have counts for

collaborators

15 papers

cond-mat.mtrl-sci2026

Improving feature resolution and pore back effect in focused ion beam tomography of porous GaN thin films

Ben Thornley, Thom R. Harris-Lee, Menno J. Kappers +2

Porous gallium nitride (GaN) is a mesoporous crystalline material, typically in the form of a thin film on an unlike substrate, prepared by electrochemically etching conductive GaN…

cond-mat.mtrl-sci2026

A stochastic simulation of the dislocation-mediated etching of porous GaN distributed Bragg reflectors

Piotr Sokolinski, Ben Thornley, Zetai Xu +3

Distributed Bragg reflectors (DBRs) can be fabricated by electrochemically etching nitride epitaxial structures consisting of alternating layers of highly n-type doped and non-inte…

cond-mat.mtrl-sci2026★ 1 cited

Controlled epitaxy of room-temperature quantum emitters in gallium nitride

Katie M. Eggleton, Joseph K. Cannon, Sam G. Bishop +5

The ability to generate quantum light at room temperature on a mature semiconductor platform opens up new possibilities for quantum technologies. Heteroepitaxial growth of gallium…

cond-mat.mtrl-sci2025★ 4 cited

A cascade model for the defect-driven etching of porous GaN distributed Bragg reflectors

Ben Thornley, Maruf Sarkar, Saptarsi Ghosh +4

Fabrication of porous GaN distributed Bragg reflectors (DBRs) via the selective electrochemical etching (ECE) of conductive Si-doped layers, separated by non-intentionally doped (N…

physics.optics2023

Additive GaN solid immersion lenses for enhanced photon extraction efficiency from diamond color centers

Xingrui Cheng, Nils Kolja Wessling, Saptarsi Ghosh +9

Effective light extraction from optically active solid-state spin centres inside high-index semiconductor host crystals is an important factor in integrating these pseudo-atomic ce…

physics.app-ph2022★ 12 cited

Fabrication and transfer print based integration of free-standing GaN membrane micro-lenses onto semiconductor chips

Nils Kolja Wessling, Saptarsi Ghosh, Benoit Guilhabert +5

We demonstrate the back-end integration of broadband, high-NA GaN micro-lenses by micro-assembly onto non-native semiconductor substrates. We developed a highly parallel micro-fabr…