180 citations · 247 across the 3 of their papers we have counts for
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cond-mat.mtrl-sci2017★ 39 cited
The structure and evolution of semiconducting buffer graphene grown on SiC(0001)
M. Conrad, J. Rault, Y. Utsumi +6
Using highly controlled coverages of graphene on SiC(0001), we have studied the structure of the first graphene layer that grows on the SiC interface. This layer, known as the buff…
cond-mat.mtrl-sci2015★ 180 cited
Semiconducting graphene from highly ordered substrate interactions
M. S. Nevius, M. Conrad, F. Wang +5
While numerous methods have been proposed to produce semiconducting graphene, a significant bandgap has never been demonstrated. The reason is that, regardless of the theoretical g…