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Transfer-printed multiple GeSn membrane mid-infrared photodetectors
Cédric Lemieux-Leduc, Mahmoud R. M. Atalla, Simone Assali +8
Due to their narrow band gap and compatibility with silicon processing, germanium-tin (GeSn) alloys are a versatile platform for scalable integrated mid-infrared photon…
Extended-SWIR High-Speed All-GeSn PIN Photodetectors on Silicon
Mahmoud R. M. Atalla, Cedric Lemieux-Leduc, Simone Assali +3
There is an increasing need for silicon-compatible high bandwidth extended-short wave infrared (e-SWIR) photodetectors (PDs) to implement cost-effective and scalable optoelectronic…
Dark current in monolithic extended-SWIR GeSn PIN photodetectors
Mahmoud R. M. Atalla, Simone Assali, Sebastian Koelling +2
The monolithic integration of extended short-wave infrared (e-SWIR) photodetectors (PDs) on silicon is highly sought-after to implement manufacturable, cost-effective sensing and i…
Recrystallization and Interdiffusion Processes in Laser-Annealed Strain-Relaxed Metastable GeSn0
Salim Abdi, Simone Assali, Mahmoud R. M. Atalla +3
The prospect of GeSn semiconductors for silicon-integrated infrared optoelectronics brings new challenges related to the metastability of this class of materials. As a matter of fa…