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cond-mat.mtrl-sci2022★ 7 cited
500-period epitaxial Ge/Si0.18Ge0.82 multi-quantum wells on silicon
Simone Assali, Sebastian Koelling, Zeinab Abboud +3
Ge/SiGe multi-quantum well heterostructures are highly sought-after for silicon-integrated optoelectronic devices operating in the broad range of the electromagnetic spectrum cover…
cond-mat.mtrl-sci2019★ 25 cited
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires
Simone Assali, Roberto Bergamaschini, Emilio Scalise +8
The growth of Sn-rich group-IV semiconductors at the nanoscale provides new paths for understanding the fundamental properties of metastable GeSn alloys. Here, we demonstrate the e…