308 citations · 741 across the 11 of their papers we have counts for
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Edge-Epitaxial Growth of InSe Nanowires toward High-Performance Photodetectors
Song Hao, Shengnan Yan, Yang Wang +17
Semiconducting nanowires offer many opportunities for electronic and optoelectronic device applications due to their special geometries and unique physical properties. However, it…
A Dual-gate MoS2 Photodetector Based on Interface Coupling Effect
Fuyou Liao, Jianan Deng, Xinyu Chen +13
Two-dimensional (2D) transition metal dichalcogenides (TMDs) based photodetectors have shown great potential for the next generation optoelectronics. However, most of the reported…
NbSiTe: A Stable Narrow-Gap Two-Dimensional Material with Ambipolar Transport and Mid-Infrared Response
Mingxing Zhao, Wei Xia, Yang Wang +5
Two-dimensional (2D) materials with narrow band gaps (~0.3 eV) are of great importance for realizing ambipolar transistors and mid-infrared (MIR) detection. However, most of the 2D…
Palladium Diselenide Long-Wavelength Infrared Photodetector with High Sensitivity and Stability
Mingsheng Long, Yang Wang, Peng Wang +11
A long-wavelength infrared (IR) photodetector based on two-dimensional materials working at room temperature would have wide applications in many aspects in remote sensing, thermal…