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Isotropic conduction and negative photoconduction in ultrathin PtSe films
Francesca Urban, Farzan Gity, Paul K. Hurley +2
PtSe ultrathin films are used as the channel of back-gated field-effect transistors (FETs) that are investigated at different temperatures and under super-continuous white lase…
Spectroscopic thickness and quality metrics for PtSe layers produced by top-down and bottom-up techniques
Beata M. Szydłowska, Oliver Hartwig, Bartlomiej Tywoniuk +6
Thin films of noble-metal-based transition metal dichalcogenides, such as PtSe, have attracted increasing attention due to their interesting layer-number dependent properties a…
Few-Layer MoS/a-Si:H Heterojunction pin-Photodiodes for extended Infrared Detection
Andreas Bablich, Daniel S. Schneider, Paul Kienitz +11
Few-layer molybdenum disulfide (FL-MoS) films have been integrated into amorphous silicon (a-Si:H) pin photodetectors. To achieve this, vertical a-Si:H photodiodes were grown b…
PtSe2 grown directly on polymer foil for use as a robust piezoresistive sensor
Conor S. Boland, Cormac Ó Coileáin, Stefan Wagner +5
Robust strain gauges are fabricated by growing PtSe2 layers directly on top of flexible polyimide foils. These PtSe2 layers are grown by low-temperature, thermally-assisted convers…
Optimized single-layer MoS2 field-effect transistors by non-covalent functionalisation
HyunJeong Kim WungYeon Kim, Maria O'Brien, Niall McEvoy +6
Field-effect transistors (FETs) with non-covalently functionalised molybdenum disulfide (MoS2) channels grown by chemical vapour deposition (CVD) on SiO2 are reported. The dangling…