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Modeling of Spin Metal-Oxide-Semiconductor Field-Effect-Transistor: A Non-Equilibrium Green's Function Approach with Spin Relaxation
Tony Low, Mark S. Lundstrom, Dmitri E. Nikonov
A spin metal-oxide-semiconductor field-effect-transistor (spin MOSFET), which combines a Schottky-barrier MOSFET with ferromagnetic source and drain contacts, is a promising device…
Performance comparison between p-i-n tunneling transistors and conventional MOSFETs
Siyuranga O. Koswatta, Mark S. Lundstrom, Dmitri E. Nikonov
Field-effect transistors based on band-to-band tunneling (BTBT) have gained a lot of recent interest due to their potential for reducing power dissipation in integrated circuits. I…
Simulation of highly idealized, atomic scale MQCA logic circuits
Dmitri E. Nikonov, George I. Bourianoff, Paolo A. Gargini
Spintronics logic devices based on majority gates formed by atomic-level arrangements of spins in the crystal lattice is considered. The dynamics of switching is modeled by time-de…
Influence of Phonon Scattering on the Performance of p-i-n Band-to-Band-Tunneling Transistors
Siyuranga O. Koswatta, Mark S. Lundstrom, Dmitri E. Nikonov
Power dissipation has become a major obstacle in performance scaling of modern integrated circuits, and has spurred the search for devices operating at lower voltage swing. In this…
Ballistic Graphene Nanoribbon MOSFETs: a full quantum real-space simulation study
Gengchiau Liang, Neophytos Neophytou, Mark S. Lundstrom +1
A real-space quantum transport simulator for carbon nanoribbon (CNR) MOSFETs has been developed. Using this simulator, the performance of carbon nanoribbon (CNR) MOSFETs is examine…
Non-equilibrium Green's function treatment of phonon scattering in carbon nanotube transistors
Siyuranga O. Koswatta, Sayed Hasan, Mark S. Lundstrom +2
We present the detailed treatment of dissipative quantum transport in carbon nanotube field-effect transistors (CNTFETs) using the non-equilibrium Green's function formalism. The e…