S. Mou

activity

20172022

β

-Ga2O3

288 citations · 532 across the 7 of their papers we have counts for

collaborators

Showing 2020Show all

3 papers · 1 filter

cond-mat.mtrl-sci2020★ 45 cited

$γ$ -phase Inclusions as Common Defects in Alloyed $β$ -(Al $_{x}$ Ga $_{1 - x}$ ) $_{2}$ O $_{3}$ and Doped $β$ -Ga $_{2}$ O $_{3}$ Films

Celesta S. Chang, Nicholas Tanen, Vladimir Protasenko +5

$β$ -Ga $_{2}$ O $_{3}$ is a promising ultra-wide bandgap semiconductor whose properties can be further enhanced by alloying with Al. Here, using atomic-resolution scanning transmission el…

cond-mat.mtrl-sci2020★ 80 cited

Adsorption-Controlled Growth of Ga2O3 by Suboxide Molecular-Beam Epitaxy

Patrick Vogt, Felix V. E. Hensling, Kathy Azizie +15

This paper introduces a growth method---suboxide molecular-beam epitaxy (S-MBE)---which enables the growth of Ga2O3 and related materials at growth rates exceeding 1 micrometer per…

cond-mat.mes-hall2020★ 2 cited

Zeeman Spin-Splitting in the (010) $β$ -Ga2O3 Two-Dimensional Electron Gas

Adam T. Neal, Yuewei Zhang, Said Elhamri +2

Through magneto-transport measurements and analysis of the observed Shubnikov de Haas oscillations in (010) (AlxGa1-x)2O3/Ga2O3 heterostructures, spin-splitting of the Landau level…

γ-phase Inclusions as Common Defects in Alloyed β-(Alx​Ga1-x​)2​O3​ and Doped β-Ga2​O3​ Films

Adsorption-Controlled Growth of Ga2O3 by Suboxide Molecular-Beam Epitaxy

Zeeman Spin-Splitting in the (010) β-Ga2O3 Two-Dimensional Electron Gas

$γ$ -phase Inclusions as Common Defects in Alloyed $β$ -(Al $_{x}$ Ga $_{1 - x}$ ) $_{2}$ O $_{3}$ and Doped $β$ -Ga $_{2}$ O $_{3}$ Films

Zeeman Spin-Splitting in the (010) $β$ -Ga2O3 Two-Dimensional Electron Gas