activity
20142022
most citedExperimental Observation of High Intrinsic Thermal Conductivity of AlN

183 citations · 423 across the 22 of their papers we have counts for

collaborators
Showing 2019Show all

6 papers · 1 filter

cond-mat.mtrl-sci2019★ 183 cited

Experimental Observation of High Intrinsic Thermal Conductivity of AlN

Zhe Cheng, Yee Rui Koh, Abdullah Mamun +17

AlN is an ultra-wide bandgap semiconductor which has been developed for applications including power electronics and optoelectronics. Thermal management of these applications is th…

physics.app-ph2019★ 2 cited

Interfacial Thermal Conductance across Room-Temperature Bonded GaN-Diamond Interfaces for GaN-on-Diamond Devices

Zhe Cheng, Fengwen Mu, Luke Yates +2

The wide bandgap, high-breakdown electric field, and high carrier mobility makes GaN an ideal material for high-power and high-frequency electronics applications such as wireless c…

physics.app-ph2019★ 79 cited

Thermal Conductance Across Harmonic-matched Epitaxial Al-sapphire Heterointerfaces

Zhe Cheng, Yee Rui Koh, Habib Ahmad +17

A unified understanding of interfacial thermal transport is missing due to the complicated nature of interfaces which involves complex factors such as interfacial bonding, interfac…

physics.app-ph2019★ 2 cited

High Thermal Boundary Conductance across Bonded Heterogeneous GaN-SiC Interfaces

Fengwen Mu, Zhe Cheng, Jingjing Shi +5

GaN-based HEMTs have the potential to be widely used in high-power and high-frequency electronics while their maximum output powers are limited by high channel temperature induced…

physics.app-ph2019★ 32 cited

Significantly Reduced Thermal Conductivity in Beta-(Al0.1Ga0.9)2O3/Ga2O3 Superlattices

Zhe Cheng, Nicholas Tanen, Celesta Chang +6

Beta-Ga2O3 has emerged as a promising candidate for electronic device applications because of its ultra-wide bandgap, high breakdown electric field, and large-area affordable subst…

cond-mat.mes-hall2019★ 5 cited

Thermal Conductance across beta-Ga2O3-diamond Van der Waals Heterogeneous Interfaces

Zhe Cheng, Luke Yates, Jingjing Shi +3

Because of its ultrawide bandgap, high breakdown electric field, and large area affordable substrates grown from the melt, beta Ga2O3 has attracted great attention recently for pot…