112 citations · 231 across the 17 of their papers we have counts for
5 papers · 1 filter
Demonstration of the ODMR activity of the telecom range ClV center in SiC: a wavefunction theory analysis
Zsolt Benedek, Oscar Bulancea-Lindvall, Joel Davidsson +2
Recently, density functional theory-based high-throughput screening of point defects in 4H-SiC revealed the positively charged chlorine-vacancy (ClV) defect to be a promising quant…
NV-like Defects More Common Than Four-Leaf Clovers: A Perspective on High-Throughput Point Defect Data
Joel Davidsson
Point defects for quantum technologies is an emerging research area, with the nitrogen-vacancy (NV) center in diamond at the forefront. However, how rare are defects with NV-like p…
High-Throughput Exploration of NV-like Color Centers Across Host Materials
Oscar Groppfeldt, Joel Davidsson, Rickard Armiento
Point defects in semiconductors offer a promising platform for advancing quantum technologies due to their localized energy states and controllable spin properties. Prior research…
Comparative study of divacancies in 3C-, 4H- and 6H-SiC
Danial Shafizade, Joel Davidsson, Takeshi Ohshima +2
The divacancy comprising two neighboring vacant sites in the SiC lattice is a promising defect for applications in quantum technology. So far, most work is concerned with the divac…
Theoretical characterization of NV-like defects in 4H-SiC using ADAQ with the SCAN and r2SCAN meta-GGA functionals
Ghulam Abbas, Oscar Bulancea-Lindvall, Joel Davidsson +2
Kohn-Sham density functional theory (DFT) is widely used for screening color centers in semiconductors. While the Perdew-Burke-Ernzerhof (PBE) functional is efficient, it often lac…