187 citations · 779 across the 14 of their papers we have counts for
14 papers
Quantum sensor in a single layer van der Waals material
Rohit Babar, Gergely Barcza, Anton Pershin +8
Point defect qubits in semiconductors have demonstrated their outstanding high spatial resolution sensing capabilities of broad multidisciplinary interest. Two-dimensional (2D) sem…
Dipolar spin relaxation of divacancy qubits in silicon carbide
Oscar Bulancea Lindvall, Nguyen Tien Son, Igor A. Abrikosov +1
Divacancy spins in silicon carbide implement qubits with outstanding characteristics and capabilities in an industrial semiconductor host. On the other hand, there are still numero…
Room-temperature control and electrical readout of individual nitrogen-vacancy nuclear spins
Michal Gulka, Daniel Wirtitsch, Viktor Ivády +7
Nuclear spins in semiconductors are leading candidates for quantum technologies, including quantum computation, communication, and sensing. Nuclear spins in diamond are particularl…
ADAQ: Automatic workflows for magneto-optical properties of point defects in semiconductors
Joel Davidsson, Viktor Ivády, Rickard Armiento +1
Automatic Defect Analysis and Qualification (ADAQ) is a collection of automatic workflows developed for high-throughput simulations of magneto-optical properties of point defect in…
Photoluminescence at the ground state level anticrossing of the nitrogen-vacancy center in diamond
Viktor Ivády, Huijie Zheng, Arne Wickenbrock +9
The nitrogen-vacancy center (NV center) in diamond at magnetic fields corresponding to the ground state level anticrossing (GSLAC) region gives rise to rich photoluminescence (PL)…
Longitudinal spin relaxation model applied to point defect qubit systems
Viktor Ivády
Controllable, partially isolated few level systems in semiconductors have recently gained multidisciplinary attention due to their widespread nanoscale sensing and quantum technolo…
Ab initio theory of negatively charged boron vacancy qubit in hBN
Viktor Ivády, Gergely Barcza, Gergő Thiering +5
Highly correlated orbitals coupled with phonons in two-dimension are identified for paramagnetic and optically active boron vacancy in hexagonal boron nitride by first principles m…
First principles predictions of magneto-optical data for semiconductor defects: the case of divacancy defects in 4H-SiC
Joel Davidsson, Viktor Ivády, Rickard Armiento +3
Study and design of magneto-optically active single point defects in semiconductors are rapidly growing fields due to their potential in quantum bit and single photon emitter appli…
Identification of Si-vacancy related room temperature qubits in 4H silicon carbide
Viktor Ivády, Joel Davidsson, Nguyen Tien Son +3
Identification of microscopic configuration of point defects acting as quantum bits is a key step in the advance of quantum information processing and sensing. Among the numerous c…
Isolated spin qubits in SiC with a high-fidelity infrared spin-to-photon interface
David J. Christle, Paul V. Klimov, Charles F. de las Casas +11
The divacancies in SiC are a family of paramagnetic defects that show promise for quantum communication technologies due to their long-lived electron spin coherence and their optic…
All-optical hyperpolarization of electron and nuclear spins in diamond
Ben L. Green, Ben G. Breeze, Gregory J. Rees +5
Low thermal polarization of nuclear spins is a primary sensitivity limitation for nuclear magnetic resonance. Here we demonstrate optically pumped (microwave-free) nuclear spin pol…
Dirac points with giant spin-orbit splitting in the electronic structure of two-dimensional transition-metal carbides
Hossein Fashandi, Viktor Ivády, Per Eklund +3
Two-dimensional (2D) materials, especially their most prominent member, graphene, have greatly influenced many scientific areas. Moreover, they have become a base for investigating…
Theoretical model of the dynamic spin polarization of nuclei coupled to paramagnetic point defects in diamond and silicon carbide
Viktor Ivády, Krisztián Szász, Abram L. Falk +6
Dynamic nuclear spin polarization (DNP) mediated by paramagnetic point defects in semiconductors is a key resource for both initializing nuclear quantum memories and producing nucl…
Theoretical unification of hybrid-DFT and DFT+U methods for the treatment of localized orbitals
Viktor Ivády, Rickard Armiento, Krisztián Szász +3
We formulate the on-site occupation dependent exchange correlation energy and effective potential of hybrid functionals for localized states and connect them to the on-site correct…