112 citations · 119 across the 2 of their papers we have counts for
6 papers
Dipolar spin relaxation of divacancy qubits in silicon carbide
Oscar Bulancea Lindvall, Nguyen Tien Son, Igor A. Abrikosov +1
Divacancy spins in silicon carbide implement qubits with outstanding characteristics and capabilities in an industrial semiconductor host. On the other hand, there are still numero…
Room-temperature control and electrical readout of individual nitrogen-vacancy nuclear spins
Michal Gulka, Daniel Wirtitsch, Viktor Ivády +7
Nuclear spins in semiconductors are leading candidates for quantum technologies, including quantum computation, communication, and sensing. Nuclear spins in diamond are particularl…
Photoluminescence at the ground state level anticrossing of the nitrogen-vacancy center in diamond
Viktor Ivády, Huijie Zheng, Arne Wickenbrock +9
The nitrogen-vacancy center (NV center) in diamond at magnetic fields corresponding to the ground state level anticrossing (GSLAC) region gives rise to rich photoluminescence (PL)…
Longitudinal spin relaxation model applied to point defect qubit systems
Viktor Ivády
Controllable, partially isolated few level systems in semiconductors have recently gained multidisciplinary attention due to their widespread nanoscale sensing and quantum technolo…
Ab initio theory of negatively charged boron vacancy qubit in hBN
Viktor Ivády, Gergely Barcza, Gergő Thiering +5
Highly correlated orbitals coupled with phonons in two-dimension are identified for paramagnetic and optically active boron vacancy in hexagonal boron nitride by first principles m…
Identification of Si-vacancy related room temperature qubits in 4H silicon carbide
Viktor Ivády, Joel Davidsson, Nguyen Tien Son +3
Identification of microscopic configuration of point defects acting as quantum bits is a key step in the advance of quantum information processing and sensing. Among the numerous c…