193 citations · 933 across the 53 of their papers we have counts for
47 papers · 1 filter
Characterization of Passive CMOS Strip Detectors After Proton Irradiation
Marta Baselga, Jan-Hendrik Arling, Naomi Davis +14
Strip detectors are populating outer trackers of high-energy particle experiments. They are convenient for covering large areas of sensitive material since they use less power and…
Review of prototypes developed in a 65 nm CMOS imaging technology in view of vertexing applications at a future lepton collider
Finn King, Matthew Lewis Franks, Yajun He +21
The OCTOPUS project addresses the development and characterization of monolithic active pixel sensors in the TPSCo 65 nm ISC technology in view of vertexing applications at a futur…
Constellation: The Autonomous Control and Data Acquisition System for Dynamic Experimental Setups
Simon Spannagel, Stephan Lachnit, Hanno Perrey +13
The operation of instruments and detectors in laboratory or beamline environments presents a complex challenge, requiring stable operation of multiple concurrent devices, often con…
Advancements and future expansions of the Caribou DAQ system
Younes Otarid, Mathieu Benoit, Eric Buschmann +9
Caribou is a versatile data acquisition (DAQ) system developed within several collaborative frameworks (CERN EP R&D, DRD3, AIDAinnova, and Tangerine) to support laboratory and test…
Characterization of the H2M Monolithic CMOS Sensor
Rafael Ballabriga, Eric Buschmann, Michael Campbell +29
The H2M (Hybrid-to-Monolithic) is a monolithic pixel sensor manufactured in a modified \SI{65}{\nano\meter}~CMOS imaging process with a small collection electrode. Its design addre…
Timing performance of a digital SiPM prototype measured with a picosecond injection laser
Daniil Rastorguev, Inge Diehl, Karsten Hansen +5
The DESY digital silicon photomultiplier (dSiPM) is a monolithic detector based on complementary metal-oxide-semiconductor (CMOS) single-photon avalanche diodes (SPADs) and feature…
Impact of the circuit layout on the charge collection in a monolithic pixel sensor
Corentin Lemoine, Rafael Ballabriga, Eric Buschmann +28
CERN's strategic R&D programme on technologies for future experiments recently started investigating the TPSCo 65nm ISC CMOS imaging process for monolithic active pixels sensors fo…
Transient studies using a TCAD and Allpix Squared combination approach
Manuel A. Del Rio Viera, Eric Buschmann, Ankur Chauhan +22
The goal of the TANGERINE project is to develop the next generation of monolithic silicon pixel detectors using a 65 nm CMOS imaging process, which offers a higher logic density an…
The H2M Monolithic Active Pixel Sensor -- characterizing non-uniform in-pixel response in a 65 nm CMOS imaging technology
Sara Ruiz Daza, Rafael Ballabriga, Eric Buschmann +28
The high energy physics community recently gained access to the TPSCo 65 nm ISC (Image Sensor CMOS), which enables a higher in-pixel logic density in monolithic active pixel sensor…
Caribou - A versatile data acquisition system for silicon pixel detector prototyping
Younes Otarid, Mathieu Benoit, Eric Buschmann +7
Caribou is a versatile data acquisition system used in multiple collaborative frameworks (CERN EP R&D, DRD3, AIDAinnova, Tangerine) for laboratory and test-beam qualification of no…
Test Beam Characterization of a Digital Silicon Photomultiplier
Finn King, Inge Diehl, Ono Feyens +8
Conventional silicon photomultipliers (SiPMs) are well established as light detectors with single-photon-detection capability and used throughout high energy physics, medical, and…
electronCT -- An Imaging Technique Using Very-high Energy Electrons
Paul Schütze, Aenne Abel, Florian Burkart +12
The electronCT technique is an imaging method based on the multiple Coulomb scattering of relativistic electrons and has potential applications in medical and industrial imaging. I…
4D-Tracking with Digital SiPMs
Inge Diehl, Finn Feindt, Ingrid-Maria Gregor +6
Silicon Photomultipliers (SiPMs) are the state-of-the-art technology in single-photon detection with solid-state detectors. Single Photon Avalanche Diodes (SPADs), the key element…
TCAD Simulation of Stitching for Passive CMOS Strip Detectors
Marta Baselga, Jan Hendrik Arling, Naomi Davis +15
Most of the tracking detectors for high energy particle experiments are filled with silicon detectors since they are radiation hard, they can give very small spatial resolution and…
Simulating Monolithic Active Pixel Sensors: A Technology-Independent Approach Using Generic Doping Profiles
Håkan Wennlöf, Dominik Dannheim, Manuel Del Rio Viera +17
The optimisation of the sensitive region of CMOS sensors with complex non-uniform electric fields requires precise simulations, and this can be achieved by a combination of electro…
Characterisation and simulation of stitched CMOS strip sensors
Naomi Davis, Jan-Hendrik Arling, Marta Baselga +20
In high-energy physics, there is a need to investigate alternative silicon sensor concepts that offer cost-efficient, large-area coverage. Sensors based on CMOS imaging technology…
Characterisation of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process
Gianluca Aglieri Rinella, Giacomo Alocco, Matias Antonelli +91
Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterise and qualify this process and to optimise…
Simulations and Performance Studies of a MAPS in 65 nm CMOS Imaging Technology
Adriana Simancas, Justus Braach, Eric Buschmann +22
Monolithic active pixel sensors (MAPS) produced in a 65 nm CMOS imaging technology are being investigated for applications in particle physics. The MAPS design has a small collecti…
The DESY Digital Silicon Photomultiplier: Device Characteristics and First Test-Beam Results
Finn Feindt, Inge Diehl, Karsten Hansen +6
Silicon Photomultipliers (SiPMs) are state-of-the-art photon detectors used in particle physics, medical imaging, and beyond. They are sensitive to individual photons in the optica…
Monolithic MHz-frame rate digital SiPM-IC with sub-100 ps precision and 70m pixel pitch
I. Diehl, K. Hansen, T. Vanat +4
This paper presents the design and characterization of a monolithic integrated circuit (IC) including digital silicon photomultipliers (dSiPMs) arranged in a 3232 pixel m…
Characterization, Simulation and Test Beam Data Analysis of Stitched Passive CMOS Strip Sensors
I. Zatocilova, J. -H. Arling, M. Baselga +19
In the passive CMOS Strips Project, strip sensors were designed at the University of Bonn and produced by LFoundry in 150 nm technology, with an additional backside processing from…
Developing a Monolithic Silicon Sensor in a 65 nm CMOS Imaging Technology for Future Lepton Collider Vertex Detectors
Adriana Simancas, Justus Braach, Eric Buschmann +21
Monolithic CMOS sensors in a 65 nm imaging technology are being investigated by the CERN EP Strategic R&D Programme on Technologies for Future Experiments for an application in par…
Ultrafast CMOS image sensors and data-enabled super-resolution for multimodal radiographic imaging and tomography
Xin Yue, Shanny Lin, Wenting Li +11
We summarize recent progress in ultrafast Complementary Metal Oxide Semiconductor (CMOS) image sensor development and the application of neural networks for post-processing of CMOS…
Towards a New Generation of Monolithic Active Pixel Sensors
Ankur Chauhan, Manuel Del Rio Viera, Doris Eckstein +16
A new generation of Monolithic Active Pixel Sensors (MAPS), produced in a 65 nm CMOS imaging process, promises higher densities of on-chip circuits and, for a given pixel size, mor…