3 papers
cond-mat.mes-hall2026
Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators
Manuel Meyer, Tobias Fähndrich, Sebastian Schmid +12
Quantum spin Hall transport in InAs/GaInSb-based two-dimensional topological insulators can be limited by parasitic bulk and edge contributions. We demonstrate that these limitatio…
cond-mat.mes-hall2025
Quantum spin Hall effect in III-V semiconductors at elevated temperatures: advancing topological electronics
Manuel Meyer, Jonas Baumbach, Sergey Krishtopenko +13
The quantum spin Hall effect (QSHE), a hallmark of topological insulators, enables dissipationless, spin-polarized edge transport and has been predicted in various two-dimensional…
cond-mat.mes-hall2024
Multi-probe analysis to separate edge currents from bulk currents in quantum spin Hall insulators and to analyze their temperature dependence
S. Benlenqwanssa, S. S. Krishtopenko, M. Meyer +13
We present a multi-probe transport analysis that effectively separates bulk and edge currents in large Hall bar devices with standard geometries. Applied to transport measurements…