3 papers
cond-mat.mes-hall2026
Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators
Manuel Meyer, Tobias Fähndrich, Sebastian Schmid +12
Quantum spin Hall transport in InAs/GaInSb-based two-dimensional topological insulators can be limited by parasitic bulk and edge contributions. We demonstrate that these limitatio…
cond-mat.mes-hall2025
A topological field-effect memristor
Manuel Meyer, Selena Barragan, Sergey Krishtopenko +13
Overcoming the limitations of the von Neumann architecture requires new computational paradigms capable of solving complex problems efficiently. Quantum and neuromorphic computing…
cond-mat.mes-hall2025
Quantum spin Hall effect in III-V semiconductors at elevated temperatures: advancing topological electronics
Manuel Meyer, Jonas Baumbach, Sergey Krishtopenko +13
The quantum spin Hall effect (QSHE), a hallmark of topological insulators, enables dissipationless, spin-polarized edge transport and has been predicted in various two-dimensional…