most citedDecoupling of epitaxy related trapping effects in AlGaN/GaN metal-insulator semiconductor high electron mobility transistors

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cond-mat.mes-hall2003

NANOTCAD2D: Two-dimensional code for the simulation of nanoelectronic devices and structures

G. Curatola, G. Iannaccone

In this paper we present NANOTCAD2D, a code for the simulation of the electrical properties of semiconductor-based nanoelectronic devices and structures in two-dimensional domains.…