1 citations · 1 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2020★ 1 cited
Decoupling of epitaxy related trapping effects in AlGaN/GaN metal-insulator semiconductor high electron mobility transistors
M. Huber, G. Pozzovivo, I. Daumiller +5
The decoupling of epitaxial factors influencing on the dynamic instabilities of AlGaN/GaN metal-insulator semiconductor high electron mobility transistors is investigated. Three di…
cond-mat.mes-hall2003
NANOTCAD2D: Two-dimensional code for the simulation of nanoelectronic devices and structures
G. Curatola, G. Iannaccone
In this paper we present NANOTCAD2D, a code for the simulation of the electrical properties of semiconductor-based nanoelectronic devices and structures in two-dimensional domains.…