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cond-mat.mtrl-sci2025★ 1 cited
Enhancing Hole Mobility in Monolayer p-FETs via Process-Induced Compression
He Lin Zhao, Sheikh Mohd Ta-Seen Afrid, Dongyoung Yoon +7
Understanding the interactions between strain, interfacial mechanics, and electrical performance is critical for designing beyond silicon electronics based on hetero-integrated 2D…
physics.app-ph2025
Strain-tunable inter-valley scattering defines universal mobility enhancement in n- and p-type 2D TMDs
Sheikh Mohd Ta-Seen Afrid, He Lin Zhao, Arend M. van der Zande +1
Strain fundamentally alters carrier transport in semiconductors by modifying their band structure and scattering pathways. In transition-metal dichalcogenides (TMDs), an emerging c…
cond-mat.mes-hall2025
Influence of thermal noise on the field-driven dynamics of the non-collinear antiferromagnet Mn3Sn
Siyuan Qian, Ankit Shukla, Shaloo Rakheja
experiences a tensile strain when grown epitaxially on , and thus the energy landscape changes from six-…