45 citations · 425 across the 42 of their papers we have counts for
9 papers · 1 filter
Temperature-Resilient True Random Number Generation with Stochastic Actuated Magnetic Tunnel Junction Devices
Laura Rehm, Md Golam Morshed, Shashank Misra +5
Nanoscale magnetic tunnel junction (MTJ) devices can efficiently convert thermal energy in the environment into random bitstreams for computational modeling and cryptography. We re…
Reduced sensitivity to process, voltage and temperature variations in activated perpendicular magnetic tunnel junctions based stochastic devices
Md Golam Morshed, Laura Rehm, Ankit Shukla +5
True random number generators (TRNGs) are fundamental building blocks for many applications, such as cryptography, Monte Carlo simulations, neuromorphic computing, and probabilisti…
2D Ambipolar Vertical Transistors as Control-free Reconfigurable Logic Devices
Zijing Zhao, Shaloo Rakheja, Wenjuan Zhu
As transistor footprint scales down to sub-10 nm regime, the process development for advancing to further technology nodes has encountered slowdowns. Achieving greater functionalit…
Impact of strain on the SOT-driven dynamics of thin film MnSn
Ankit Shukla, Siyuan Qian, Shaloo Rakheja
MnSn, a metallic antiferromagnet with an anti-chiral 120 spin structure, generates intriguing magneto-transport signatures such as a large anomalous Hall effect, spin-p…
Low-Thermal-Budget Ferroelectric Field-Effect Transistors Based on CuInP2S6 and InZnO
Hojoon Ryu, Junzhe Kang, Minseong Park +5
In this paper, we demonstrate low-thermal-budget ferroelectric field-effect transistors (FeFETs) based on two-dimensional ferroelectric CuInP2S6 (CIPS) and oxide semiconductor InZn…
Physics-Based Modeling and Validation of 2D Schottky Barrier Field-Effect Transistors
Ashwin Tunga, Zijing Zhao, Ankit Shukla +2
In this work, we describe the charge transport in two-dimensional (2D) Schottky barrier field-effect transistors (SB-FETs) based on the carrier injection at the Schottky contacts.…