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physics.app-ph2026
Hot LO Phonon-Induced RF Nonlinearity in GaN High-Electron-Mobility Transistors
Ankan Ghosh Dastider, Matt Grupen, Nicholas C. Miller +1
Hot longitudinal optical (LO) phonons in GaN have recently been identified as a major factor degrading the DC performance of GaN high-electron-mobility transistors (HEMTs) by 30-60…
physics.app-ph2026
Physics-based Full-band GaN High-Electron-Mobility Transistor Simulation Suggests Upper Bound of LO Phonon Lifetime
Ankan Ghosh Dastider, Matt Grupen, Ashwin Tunga +1
Intrinsic limits to device performance arise from fundamental material properties that define the best achievable operation, independent of engineering constraints. In GaN high-ele…