45 citations · 425 across the 42 of their papers we have counts for
14 papers · 1 filter
Hot LO Phonon-Induced RF Nonlinearity in GaN High-Electron-Mobility Transistors
Ankan Ghosh Dastider, Matt Grupen, Nicholas C. Miller +1
Hot longitudinal optical (LO) phonons in GaN have recently been identified as a major factor degrading the DC performance of GaN high-electron-mobility transistors (HEMTs) by 30-60…
Physics-based Full-band GaN High-Electron-Mobility Transistor Simulation Suggests Upper Bound of LO Phonon Lifetime
Ankan Ghosh Dastider, Matt Grupen, Ashwin Tunga +1
Intrinsic limits to device performance arise from fundamental material properties that define the best achievable operation, independent of engineering constraints. In GaN high-ele…
Strain-tunable inter-valley scattering defines universal mobility enhancement in n- and p-type 2D TMDs
Sheikh Mohd Ta-Seen Afrid, He Lin Zhao, Arend M. van der Zande +1
Strain fundamentally alters carrier transport in semiconductors by modifying their band structure and scattering pathways. In transition-metal dichalcogenides (TMDs), an emerging c…
Reduced sensitivity to process, voltage and temperature variations in activated perpendicular magnetic tunnel junctions based stochastic devices
Md Golam Morshed, Laura Rehm, Ankit Shukla +5
True random number generators (TRNGs) are fundamental building blocks for many applications, such as cryptography, Monte Carlo simulations, neuromorphic computing, and probabilisti…
2D Ambipolar Vertical Transistors as Control-free Reconfigurable Logic Devices
Zijing Zhao, Shaloo Rakheja, Wenjuan Zhu
As transistor footprint scales down to sub-10 nm regime, the process development for advancing to further technology nodes has encountered slowdowns. Achieving greater functionalit…
Physics-Based Modeling and Validation of 2D Schottky Barrier Field-Effect Transistors
Ashwin Tunga, Zijing Zhao, Ankit Shukla +2
In this work, we describe the charge transport in two-dimensional (2D) Schottky barrier field-effect transistors (SB-FETs) based on the carrier injection at the Schottky contacts.…
A True Random Number Generator for Probabilistic Computing using Stochastic Magnetic Actuated Random Transducer Devices
Ankit Shukla, Laura Heller, Md Golam Morshed +4
Magnetic tunnel junctions (MTJs), which are the fundamental building blocks of spintronic devices, have been used to build true random number generators (TRNGs) with different trad…
Switching time of spin-torque-driven magnetization in biaxial ferromagnets
Ankit Shukla, Arun Parthasarathy, Shaloo Rakheja
We analytically model the magnetization switching time of a biaxial ferromagnet driven by an antidamping-like spin torque. The macrospin magnetization dynamics is mapped to an ener…
Precessional spin-torque dynamics in biaxial antiferromagnets
Arun Parthasarathy, Egecan Cogulu, Andrew D. Kent +1
The Néel order of an antiferromagnet subject to a spin torque can undergo precession in a circular orbit about any chosen axis. To orient and stabilize the motion against the effec…
Phenomenological description of the dynamics of bipartite antiferromagnets in the limit of strong exchange
Arun Parthasarathy, Shaloo Rakheja
The equation of motion of the staggered order parameter is derived in a step-by-step manner from the coupled Landau-Lifshitz-Gilbert dynamics of bipartite spin moments in the limit…
Dynamics of Magnetoelectric Reversal of Antiferromagnetic Domain
Arun Parthasarathy, Shaloo Rakheja
When electric and magnetic fields are applied together on a magnetoelectric antiferromagnet, the domain state is subject to reversal. Although the initial and final conditions are…
An analytic virtual-source-based current-voltage model for ultra-thin black phosphorus field-effect transistors
Elahe Yarmoghaddam, Nazila Haratipour, Steven J. Koester +1
In this paper, we develop an analytic physics-based model to describe current conduction in ultra-thin black phosphorus (BP) field-effect transistors (FETs). The model extends the…
Reversal Time of Jump-Noise Dynamics for Large Nucleation
Arun Parthasarathy, Shaloo Rakheja
The jump-noise is a phenomenological stochastic process used to model the thermal fluctuation of magnetization in nanomagnets. In this work, the large nucleation regime of jump-noi…
Voltage-Controlled Topological-Spin Switch for Ultra-Low-Energy Computing--Performance Modeling and Benchmarking
Shaloo Rakheja, Michael E. Flattè, Andrew D. Kent
A voltage-controlled topological-spin switch (vTOPSS) that uses a hybrid topological insulator-magnetic insulator multiferroic is presented that can implement Boolean logic operati…