activity
20152023
most citedSingle-layer MoS on Au(111): band gap renormalization and substrate interaction

163 citations · 1.3k across the 35 of their papers we have counts for

collaborators
Showing 2018Show all

6 papers · 1 filter

cond-mat.mtrl-sci2018★ 9 cited

Electron-phonon coupling in single-layer MoS2

Sanjoy K. Mahatha, Arlette S. Ngankeu, Nicki Frank Hinsche +15

The electron-phonon coupling strength in the spin-split valence band maximum of single-layer MoS is studied using angle-resolved photoemission spectroscopy and density function…

cond-mat.mtrl-sci2018★ 8 cited

Quasi-free-standing single-layer WS2 achieved by intercalation

Sanjoy K. Mahatha, Maciej Dendzik, Charlotte E. Sanders +4

Large-area and high-quality single-layer transition metal dichalcogenides can be synthesized by epitaxial growth on single-crystal substrates. An important advantage of this approa…

cond-mat.mtrl-sci2018★ 38 cited

Spin structure of K valleys in single-layer WS on Au(111)

Philipp Eickholt, Charlotte Sanders, Maciej Dendzik +6

The spin structure of the valence and conduction bands at the and ' valleys of single-layer WS on Au(111) is determined by spin- and…

cond-mat.mes-hall2018★ 42 cited

Pseudodoping of Metallic Two-Dimensional Materials by The Supporting Substrates

Bin Shao, Andreas Eich, Charlotte Sanders +5

We demonstrate how hybridization between a two-dimensional material and its substrate can lead to an apparent heavy doping, using the example of monolayer TaS grown on Au(111).…

cond-mat.mtrl-sci2018★ 33 cited

Growth and Structure of Singly-Oriented Single-Layer Tungsten Disulfide on Au(111)

Luca Bignardi, Daniel Lizzit, Harsh Bana +14

We present a complete characterisation at the nanoscale of the growth and structure of single-layer tungsten disulfide (WS) epitaxially grown on Au(111). Following the growth p…

cond-mat.mtrl-sci2018★ 1 cited

Epitaxial Growth of Single-Orientation High-Quality MoS Monolayers

Harsh Bana, Elisabetta Travaglia, Luca Bignardi +16

We present a study on the growth and characterization of high-quality single-layer MoS with a single orientation, i.e. without the presence of mirror domains. This single orien…