223 citations · 1.9k across the 44 of their papers we have counts for
6 papers · 1 filter
A new quasi-one-dimensional transition metal chalcogenide semiconductor (NbSeI)I
Kejian Qu, Zachary W. Riedel, Irián Sánchez-Ramírez +8
The discovery of new low-dimensional transition metal chalcogenides is contributing to the already prosperous family of these materials. In this study, needle-shaped single crystal…
Unidirectional Magnetoresistance in Antiferromagnet/Heavy-metal bilayers
Soho Shim, M. Mehraeen, Joseph Sklenar +6
The interplay between electronic transport and antiferromagnetic order has attracted a surge of interest as recent studies have shown that a moderate change in the spin orientation…
Large Exotic Spin Torques in Antiferromagnetic Iron Rhodium
Jonathan Gibbons, Takaaki Dohi, Vivek P. Amin +16
Spin torque is a promising tool for driving magnetization dynamics for novel computing technologies. These torques can be easily produced by spin-orbit effects, but for most conven…
Single Gate P-N Junctions in Graphene-Ferroelectric Devices
J. Henry Hinnefeld, Ruijuan Xu, Steven Rogers +4
Graphene's linear dispersion relation and the attendant implications for bipolar electronics applications have motivated a range of experimental efforts aimed at producing p-n junc…
Magnetoresistance in Single Layer Graphene: Weak Localization and Universal Conductance Fluctuation Studies
Yung-Fu Chen, Myung-Ho Bae, Cesar Chialvo +3
We report measurements of magnetoresistance in single-layer graphene as a function of gate voltage (carrier density) at 250 mK. By examining signatures of weak localization (WL) an…
Negative and Positive Magnetoresistance in Bilayer Graphene: Effects of Weak Localization and Charge Inhomogeneity
Yung-Fu Chen, Myung-Ho Bae, Cesar Chialvo +3
We report measurements of magnetoresistance in bilayer graphene as a function of gate voltage (carrier density) and temperature. We examine multiple contributions to the magnetores…