activity
20172023
most citedZero Bias Power Detector Circuits based on MoS Field Effect Transistors on Wafer-Scale Flexible Substrates

28 citations · 72 across the 3 of their papers we have counts for

collaborators
Showing cond-mat.mes-hallShow all

1 paper · 1 filter

cond-mat.mes-hall2023★ 21 cited

CVD Graphene Contacts for Lateral Heterostructure MoS Field Effect Transistors

Daniel S. Schneider, Leonardo Lucchesi, Eros Reato +12

Intensive research is carried out on two-dimensional materials, in particular molybdenum disulfide, towards high-performance transistors for integrated circuits. Fabricating transi…