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physics.app-ph2025
Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
Justin Rudie, Huong Tran, Yang Zhang +10
SiGeSn-based optoelectronic devices, which operate across a broad infrared wavelength range, have attracted significant attention, particularly heterostructures utilizing quantum w…
physics.app-ph2019★ 1 cited
Si-based GeSn photodetectors towards mid-infrared imaging applications
Huong Tran, Thach Pham, Joe Margetis +13
This paper reports a comprehensive study of Si-based GeSn mid-infrared photodetectors, which includes: 1) the demonstration of a set of photoconductors with Sn compositions ranging…
physics.app-ph2017
Si-based GeSn lasers with wavelength coverage of 2 to 3 μm and operating temperatures up to 180 K
Joe Margetis, Sattar Al-Kabi, Wei Du +13
A Si-based monolithic laser is highly desirable for full integration of Si-photonics. Lasing from direct bandgap group-IV GeSn alloy has opened a completely new venue from the trad…