1 citations · 1 across the 6 of their papers we have counts for
6 papers
Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
Justin Rudie, Huong Tran, Yang Zhang +10
SiGeSn-based optoelectronic devices, which operate across a broad infrared wavelength range, have attracted significant attention, particularly heterostructures utilizing quantum w…
Study of Group III-V Waveguides on Sapphire Platform for Photonic Integrated Circuits
Manoj Kumar Shah, Richard A. Soref, Diandian Zhang +4
Photonic integrated circuits (PICs) have been acknowledged as the promising platforms for the applications in data communication, Lidar in autonomous driving vehicles, innovative s…
Atomic short-range order: a new degree of freedom for band engineering of GeSn semiconductor alloys
Shang Liu, Yunfan Liang, Nirosh M. Eldose +18
Chemical short-range order (SRO) in alloys denotes the statistical preference or avoidance between atomic species on neighboring lattice sites. Here, we highlight SRO as a powerful…
Si-based GeSn photodetectors towards mid-infrared imaging applications
Huong Tran, Thach Pham, Joe Margetis +13
This paper reports a comprehensive study of Si-based GeSn mid-infrared photodetectors, which includes: 1) the demonstration of a set of photoconductors with Sn compositions ranging…
UHV-CVD Growth of High Quality GeSn Using SnCl4: From Growth Optimization to Prototype Devices
P. C. Grant, W. Dou, B. Alharthi +9
The persistent interest of the epitaxy of group IV alloy GeSn is mainly driven by the demand of efficient light source that could be monolithically integrated on Si for mid-infrare…
Si-based GeSn lasers with wavelength coverage of 2 to 3 μm and operating temperatures up to 180 K
Joe Margetis, Sattar Al-Kabi, Wei Du +13
A Si-based monolithic laser is highly desirable for full integration of Si-photonics. Lasing from direct bandgap group-IV GeSn alloy has opened a completely new venue from the trad…