3 citations · 6 across the 5 of their papers we have counts for
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Electrically injected GeSn lasers with peak wavelength up to 2.7 micrometer at 90 K
Yiyin Zhou, Solomon Ojo, Yuanhao Miao +15
GeSn lasers enable monolithic integration of lasers on the Si platform using all-group-IV direct-bandgap materials. Although optically pumped GeSn lasers have made significant prog…
Electrically injected GeSn lasers on Si operating up to 100 K
Yiyin Zhou, Yuanhao Miao, Solomon Ojo +14
The significant progress of GeSn material development has enabled a feasible solution to the long-desired monolithically integrated lasers on the Si platform. While there are many…
Band structure of strained GeSn alloy: a full-zone 30-band model
Zhigang Song, Weijun Fan, Chuan Seng Tan +4
We extend the previous 30-band model effectively employed for relaxed GeSn alloy to the case of strained GeSn alloy. The strain-relevant p…
Si-based GeSn photodetectors towards mid-infrared imaging applications
Huong Tran, Thach Pham, Joe Margetis +13
This paper reports a comprehensive study of Si-based GeSn mid-infrared photodetectors, which includes: 1) the demonstration of a set of photoconductors with Sn compositions ranging…
Band structure of GeSnalloy: a full-zone 30-band model
Zhigang Song, Weijun Fan, Chuanseng Tan +4
A full-zone 30-band model is developed as an efficient and reliable tool to compute electronic band structure in GeSn alloy. The model was first used to…
Si-based GeSn lasers with wavelength coverage of 2 to 3 μm and operating temperatures up to 180 K
Joe Margetis, Sattar Al-Kabi, Wei Du +13
A Si-based monolithic laser is highly desirable for full integration of Si-photonics. Lasing from direct bandgap group-IV GeSn alloy has opened a completely new venue from the trad…