60 citations · 205 across the 31 of their papers we have counts for
4 papers · 1 filter
Short-range order in GeSn alloy
Boxiao Cao, Shunda Chen, Xiaochen Jin +2
Group IV alloys have been long viewed as homogeneous random solid solutions since they were first perceived as Si-compatible, direct-band-gap semiconductors 30 years ago. Such a pe…
Electrically injected GeSn lasers with peak wavelength up to 2.7 micrometer at 90 K
Yiyin Zhou, Solomon Ojo, Yuanhao Miao +15
GeSn lasers enable monolithic integration of lasers on the Si platform using all-group-IV direct-bandgap materials. Although optically pumped GeSn lasers have made significant prog…
Monte Carlo Modeling and Design of Photon Energy Attenuation Layers (PALs) for 10-30x Quantum Yield Enhancement in Si-based Hard X-ray Detectors
Eldred Lee, Michael R. James, Kaitlin M. Anagnost +3
High-energy (>20keV) X-ray photon detection at high quantum yield, high spatial resolution and short response time has long been an important area of study in physics. Scintillatio…
Electrically injected GeSn lasers on Si operating up to 100 K
Yiyin Zhou, Yuanhao Miao, Solomon Ojo +14
The significant progress of GeSn material development has enabled a feasible solution to the long-desired monolithically integrated lasers on the Si platform. While there are many…