3 citations · 6 across the 6 of their papers we have counts for
7 papers
3D Nanoscale Mapping of Short-Range Order in GeSn Alloys
Shang Liu, Alejandra Cuervo Covian, Xiaoxin Wang +5
GeSn on Si has attracted much research interest due to its tunable direct bandgap for mid-infrared applications. Recently, short-range order (SRO) in GeSn alloys has been theoretic…
Short-range order in GeSn alloy
Boxiao Cao, Shunda Chen, Xiaochen Jin +2
Group IV alloys have been long viewed as homogeneous random solid solutions since they were first perceived as Si-compatible, direct-band-gap semiconductors 30 years ago. Such a pe…
Electrically injected GeSn lasers with peak wavelength up to 2.7 micrometer at 90 K
Yiyin Zhou, Solomon Ojo, Yuanhao Miao +15
GeSn lasers enable monolithic integration of lasers on the Si platform using all-group-IV direct-bandgap materials. Although optically pumped GeSn lasers have made significant prog…
Monte Carlo Modeling and Design of Photon Energy Attenuation Layers (PALs) for 10-30x Quantum Yield Enhancement in Si-based Hard X-ray Detectors
Eldred Lee, Michael R. James, Kaitlin M. Anagnost +3
High-energy (>20keV) X-ray photon detection at high quantum yield, high spatial resolution and short response time has long been an important area of study in physics. Scintillatio…
Electrically injected GeSn lasers on Si operating up to 100 K
Yiyin Zhou, Yuanhao Miao, Solomon Ojo +14
The significant progress of GeSn material development has enabled a feasible solution to the long-desired monolithically integrated lasers on the Si platform. While there are many…
Improved Thin Film Quality and Photoluminescence of N-Doped Epitaxial Germanium-on-Silicon using MOCVD
Guangnan Zhou, Alejandra V. Cuervo Covian, Kwang Hong Lee +4
Ge-on-Si structures in-situ doped with phosphorus or arsenic via metal organic chemical vapor deposition (MOCVD) were investigated. Surface roughness, strain, threading dislocation…