319 citations · 572 across the 12 of their papers we have counts for
8 papers · 1 filter
Perpendicular magnetic anisotropy in as-deposited CoFeB/MgO thin films
Kaihua Lou, Tunan Xie, Qianwen Zhao +5
Fabrication of perpendicularly magnetized ferromagnetic films on various buffer layers, especially on numerous newly discovered spin-orbit torque (SOT) materials to construct energ…
Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer
Kaihua Lou, Qianwen Zhao, Baiqing Jiang +1
Unidirectional magnetoresistance (UMR) in a ferromagnetic bilayer due to the spin Hall effects (SHEs) provides a facile means of probing in-plane magnetization to avoid complex mag…
Charge-Spin Interconversion in Epitaxial Pt Probed by Spin-Orbit Torques in a Magnetic Insulator
Peng Li, Lauren J. Riddiford, Chong Bi +10
We measure spin-orbit torques (SOTs) in a unique model system of all-epitaxial ferrite/Pt bilayers to gain insights into charge-spin interconversion in Pt. With negligible electron…
Large and Robust Charge-to-Spin Conversion in Sputtered Conductive WTex with Disorder
Xiang Li, Peng Li, Vincent D. -H. Hou +10
Topological materials with large spin-orbit coupling and immunity to disorder-induced symmetry breaking show great promise for efficiently converting charge to spin. Here, we repor…
Two-terminal spin-orbit torque magnetoresistive random access memory
Noriyuki Sato, Fen Xue, Robert M. White +2
Spin-transfer torque magnetoresistive random access memory (STT-MRAM) is an attractive alternative to current random access memory technologies due to its non-volatility, fast oper…
Electrical control of metallic heavy-metal/ferromagnet interfacial states
Chong Bi, Congli Sun, Meng Xu +3
Voltage control effects provide an energy-efficient means of tailoring material properties, especially in highly integrated nanoscale devices. However, only insulating and semicond…
Spin-orbit torque switching of synthetic antiferromagnets
Chong Bi, Hamid Almasi, Kyle Price +5
We report that synthetic antiferromagnets (SAFs) can be efficiently switched by spin-orbit torques (SOTs) and the switching scheme does not obey the usual SOT switching rule. We sh…
Reversal-mechanism of in-plane current induced perpendicular switching in a single ferromagnetic layer
Chong Bi, Ming Liu
We propose a magnetization reversal model to explain the perpendicular switching of a single ferromagnetic layer induced by an in-plane current. Contrary to previously proposed rev…