97 citations · 265 across the 7 of their papers we have counts for
6 papers · 1 filter
Multi-valley envelope function equations and effective potentials for P impurity in silicon
M. V. Klymenko, S. Rogge, F. Remacle
We propose a system of real-space envelope function equations without fitting parameters for modeling the electronic spectrum and wave functions of a phosphorus donor atom embedded…
Charge dynamics and spin blockade in a hybrid double quantum dot in silicon
M. Urdampilleta, A. Chatterjee, C. C. Lo +7
Electron spin qubits in silicon, whether in quantum dots or in donor atoms, have long been considered attractive qubits for the implementation of a quantum computer due to the semi…
Radio-frequency dispersive detection of donor atoms in a field-effect transistor
J. Verduijn, M. Vinet, S. Rogge
Radio-frequency dispersive read-out can provide a useful probe to nano-scale structures such as nano-wire devices, especially when the implementation of charge sensing is not strai…
Balanced ternary addition using a gated silicon nanowire
J. A. Mol, J. van der Heijden, J. Verduijn +3
We demonstrate the proof of principle for a ternary adder using silicon metal-on-insulator single electron transistors (SET). Gate dependent rectifying behavior of a single electro…
Tunable Kondo effect in a single donor atom
G. P. Lansbergen, G. C. Tettamanzi, J. Verduijn +4
The Kondo effect has been observed in a single gate-tunable atom. The measurement device consists of a single As dopant incorporated in a Silicon nanostructure. The atomic orbitals…
Sub-threshold channels at the edges of nanoscale triple-gate silicon transistors
H. Sellier, G. P. Lansbergen, J. Caro +5
We investigate by low-temperature transport experiments the sub-threshold behavior of triple-gate silicon field-effect transistors. These three-dimensional nano-scale devices consi…