activity
20152026
most citedInAs-Al Hybrid Devices Passing the Topological Gap Protocol

216 citations · 654 across the 22 of their papers we have counts for

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Showing 2020Show all

5 papers · 1 filter

cond-mat.mes-hall2020★ 25 cited

Full parity phase diagram of a proximitized nanowire island

J. Shen, G. W. Winkler, F. Borsoi +14

We measure the charge periodicity of Coulomb blockade conductance oscillations of a hybrid InSb-Al island as a function of gate voltage and parallel magnetic field. The periodicity…

cond-mat.mes-hall2020★ 25 cited

Single-shot fabrication of semiconducting-superconducting nanowire devices

Francesco Borsoi, Grzegorz P. Mazur, Nick van Loo +13

Semiconducting-superconducting nanowires attract widespread interest owing to the possible presence of non-abelian Majorana zero modes, which hold promise for topological quantum c…

cond-mat.mes-hall2020★ 77 cited

Shadow-wall lithography of ballistic superconductor-semiconductor quantum devices

Sebastian Heedt, Marina Quintero-Pérez, Francesco Borsoi +14

The realization of a topological qubit calls for advanced techniques to readily and reproducibly engineer induced superconductivity in semiconductor nanowires. Here, we introduce a…

cond-mat.mes-hall2020★ 15 cited

Transmission phase read-out of a large quantum dot in a nanowire interferometer

Francesco Borsoi, Kun Zuo, Sasa Gazibegovic +4

Detecting the transmission phase of a quantum dot via interferometry can reveal the symmetry of the orbitals and details of electron transport. Crucially, interferometry will enabl…

cond-mat.mes-hall2020★ 6 cited

Exfoliated hexagonal BN as gate dielectric for InSb nanowire quantum dots with improved gate hysteresis and charge noise

Felix Jekat, Benjamin Pestka, Diana Car +8

We characterize InSb quantum dots induced by bottom finger gates within a nanowire that is grown via the vapor-liquid-solid process. The gates are separated from the nanowire by an…