Low-Threshold Surface-Passivated Photonic Crystal Nanocavity Laser

Abstract

The efficiency and operating range of a photonic crystal laser is improved by passivating the InGaAs quantum well (QW) gain medium and GaAs membrane using an (NH4)S treatment. The passivated laser shows a four-fold reduction in nonradiative surface recombination rate, resulting in a four-fold reduction in lasing threshold. A three-level carrier dynamics model explains the results and shows that lasing threshold is as much determined by surface recombination losses as by the cavity quality factor (Q). Surface passivation therefore appears crucial in operating such lasers under practical conditions.

3 pages, 2 figures

References in corpus (3)

• Controlling the Spontaneous Emission Rate of Single Quantum Dots in a 2D Photonic Crystal
• Generation and transfer of single photons on a photonic crystal chip
• Terahertz Room-Temperature Photonic Crystal Nanocavity Laser

Cited by in corpus (8)

• Ultra-low threshold, electrically pumped quantum dot photonic crystal nanocavity laser
• Surface-passivated high-Q GaAs photonic crystal nanocavity with quantum dots
• Exciton polaritons in two-dimensional photonic crystals
• Time-Resolved Studies of a Rolled-Up Semiconductor Microtube Laser
• Terahertz Room-Temperature Photonic Crystal Nanocavity Laser
• Transient chirp in high speed photonic crystal quantum dots lasers with controlled spontaneous emission
• Thresholdless dressed-atom laser in a photonic band-gap material
• Time-resolved lasing action from single and coupled photonic crystal nanocavity array lasers emitting in the telecom-band