Demonstration of an erbium doped microdisk laser on a silicon chip

Abstract

An erbium doped micro-laser is demonstrated utilizing $\mathrm{Si}{\mathrm{O}}_2$ microdisk resonators on a silicon chip. Passive microdisk resonators exhibit whispering gallery type (WGM) modes with intrinsic optical quality factors of up to $6\times 10^7$ and were doped with trivalent erbium ions (peak concentration $\sim 3.8\times 10^{20}\mathrm{c}{\mathrm{m}}^{-3})$ using MeV ion implantation. Coupling to the fundamental WGM of the microdisk resonator was achieved by using a tapered optical fiber. Upon pumping of the ${}^4$ ${}^4{I}_{13/2}$ erbium transition at 1450 nm, a gradual transition from spontaneous to stimulated emission was observed in the 1550 nm band. Analysis of the pump-output power relation yielded a pump threshold of 43 $\mu$W and allowed measuring the spontaneous emission coupling factor: $\beta \approx 1\times 10^{-3}$.

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