Design, fabrication and characterisation of InGaAs/InP single-photon avalanche diode detectors
arXiv:physics/0605073
Abstract
This paper demonstrates the performance of planar geometry InGaAs/InP avalanche diodes, specifically designed and fabricated for Geiger-mode operation at wavelengths around 1550nm, in terms of dark count rate, single-photon detection efficiency, afterpulsing and photon-timing jitter.
Presented at CLEO QELS, Long Beach, California (May 2006)