A systematic study of polarized electron emission from strained GaAs/GaAsP superlattice photocathodes

Abstract

Spin-polarized electron photoemission has been studied for GaAs/GaAs${}_{1-x}$P${}_x$ strained superlattice cathodes grown by gas-source molecular beam epitaxy. The superlattice structural parameters are systematically varied to optimize the photoemission characteristics. The heavy-hole and light-hole transitions are reproducibly observed in quantum efficiency spectra, enabling direct measurement of the band energies and the energy splitting. Electron-spin polarization as high as 86% with over 1% quantum efficiency has been observed.

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