170 Nanometer Nuclear Magnetic Resonance Imaging using Magnetic Resonance Force Microscopy

Abstract

We demonstrate one-dimensional nuclear magnetic resonance imaging of the semiconductor GaAs with 170 nanometer slice separation and resolve two regions of reduced nuclear spin polarization density separated by only 500 nanometers. This is achieved by force detection of the magnetic resonance, Magnetic Resonance Force Microscopy (MRFM), in combination with optical pumping to increase the nuclear spin polarization. Optical pumping of the GaAs creates spin polarization up to 12 times larger than the thermal nuclear spin polarization at 5 K and 4 T. The experiment is sensitive to sample volumes containing $\sim 4\times 10^{11}$ ${}^{71}$Ga$/\sqrt{Hz}$. These results demonstrate the ability of force-detected magnetic resonance to apply magnetic resonance imaging to semiconductor devices and other nanostructures.

Submitted to J of Magnetic Resonance

References in corpus (2)

• Spin polarization contrast observed in GaAs by force-detected nuclear magnetic resonance
• Temperature measurement at the end of a cantilever using oxygen paramagnetism in solid air

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