Excitonic lasing in semiconductor quantum wires

Abstract

Direct experimental evidences for excitonic lasing is obtained in optically pumped V-groove quantum wire structures. We demonstrate that laser emission at a temperature of 10 K arises from a population inversion of localized excitons within the inhomogenously-broadened luminescence line. At the lasing threshold, we estimate a maximum exciton density of about 1.8 105cm-1.

11 pages, 4 figures, submitted to Phys. Rev. B

References in corpus (3)

• Effect of disorder on the temperature dependence of radiative lifetimes in V-groove quantum wires
• Electron-hole correlation effects in the emission of light from quantum wires
• Band gap renormalization in photoexcited semiconductor quantum wire structures in the GW approximation

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• Mott transition from a diluted exciton gas to a dense electron-hole plasma in a single V-shaped quantum wire
• Carrier relaxation in GaAs v-groove quantum wires and the effects of localization
• Longitudinal photocurrent spectroscopy of a single GaAs/AlGaAs v-groove quantum wire