Excitonic lasing in semiconductor quantum wires
arXiv:cond-mat/9912009 · doi:10.1103/PhysRevB.61.R10575
Abstract
Direct experimental evidences for excitonic lasing is obtained in optically pumped V-groove quantum wire structures. We demonstrate that laser emission at a temperature of 10 K arises from a population inversion of localized excitons within the inhomogenously-broadened luminescence line. At the lasing threshold, we estimate a maximum exciton density of about 1.8 105cm-1.
11 pages, 4 figures, submitted to Phys. Rev. B