Nonlinear Spin Polarized Transport Through a Quantum Dot

Abstract

We present a theoretical analysis of the nonlinear bias and temperature dependence of current-voltage characteristics of a spin-valve device which is formed by connecting a quantum dot to two ferromagnetic electrodes whose magnetic moments orient at an angle $\theta$ with respect to each other. The theory is based on nonequilibrium Green's function approach and focused on current perpendicular to plane geometry. Coulomb interaction has been taken into account explicitly at the Hartree level. We derive a formula in closed form for current flowing through the device in general terms of bias and temperature. In the wideband limit we report exact results for the TMR junction nonlinear I-V curve as a function of $\theta$. We also report the conductance slope at zero bias as a function of temperature for which experimental results reported an anomalous behavior.

References in corpus (6)

• Scattering Theory of Photon-Assisted Electron Transport
• Spin-accumulation in small ferromagnetic double barrier junctions
• Assisted Tunneling in Ferromagnetic Junctions and Half-Metallic Oxides
• Nonlinear I-V Characteristics of a Mesoscopic Conductor
• Scattering Matrix Theory For Nonlinear Transport
• Electrochemical capacitance of a leaky nano-capacitor

Cited by in corpus (9)

• Theory of Transport through Quantum-Dot Spin Valves in the Weak-Coupling Regime
• Interference Effects on Kondo-Assisted Transport through Double Quantum Dots
• Electronic Transport in Hybrid Mesoscopic Structures: A Nonequilibrium Green Function Approach
• Time-Dependent Spin-Polarized Transport Through a Resonant Tunneling Structure with Multi-Terminal
• Parametric quantum spin pump
• Spin-Polarized Transprot through Double Quantum Dots
• Spin Relaxation at Graphene Nanoribbons in the presence of Substrate Surface Roughness
• Spin-Polarized Transport in Ferromagnet-Marginal Fermi Liquid Systems
• Shot noise of spin current and spin transfer torque