Edge State Transport of Separately Contacted Bilayer Systems in the Fractional Quantum Hall Regime

Abstract

Hall and diagonal resistances of bilayer fractional quantum Hall systems are discussed theoretically. The bilayers have electrodes attached separately to each layer. They are assumed to be coupled weakly by interlayer tunneling, while the interlayer Coulomb interaction is negligibly small. It is shown that source-drain voltage dependence of the resistances reflects the Luttinger liquid parameter of the edge state.

3 pages with 2 eps figure, Revtex, contributed paper to EP2DS-13

References in corpus (4)

• Edge State Transport in Separately Contacted Double-Layer Quantum Hall Systems
• Inter-layer edge tunneling and transport properties in separately contacted double-layer quantum Hall systems
• Inter-layer Edge Tunneling and Transport Properties in Double-Layer Quantum Hall Systems
• QHE of Bilayer Systems in the Presence of Tunneling -- $\nu =1/q$ case --