Effect of disorder on the temperature dependence of radiative lifetimes in V-groove quantum wires
arXiv:cond-mat/9812076 · doi:10.1103/PhysRevB.59.2910
Abstract
We have studied the effect of disorder on the radiative properties of semiconductor quantum wires by time-resolved photoluminescence spectroscopy. The dependence of the radiative lifetimes is measured over a temperature range extending from 8 to 150 K. At low temperatures we find that the measured dependence does not conform to the theoretical prediction for recombination of free excitons in a quasi one-dimensional system due to the major influence of disorder. An extension of the theory is developped in order to take into account exciton ionization and the contribution of free carriers. A mean localization length for excitons is also estimated from the radiative lifetime at 8 K.
10 pages, 5 figures to be published in Phys. Rev. B (15 january 1999)
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