Suppression of hole-hole scattering in GaAs/AlGaAs heterostructures under uniaxial compression

Abstract

Resistance, magnetoresistance and their temperature dependencies have been investigated in the 2D hole gas at a [001] p-GaAs/Al${}_{0.5}$Ga${}_{0.5}$As heterointerface under [110] uniaxial compression. Analysis performed in the frame of hole-hole scattering between carriers in the two spin splitted subbands of the ground heavy hole state indicates, that h-h scattering is strongly suppressed by uniaxial compression. The decay time ${\tau }_{01}$ of the relative momentum reveals 4.5 times increase at a uniaxial compression of 1.3 kbar.

5 pages, 3 figures. submitted to Phys.Rev.B

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