Impurity bands and sequential resonant tunneling in the presence of terahertz fields

Abstract

A theoretical and experimental study of transport in a low doped multiple quantum well structure shows that impurity bands are essential in understanding the electronic transport both with and without terahertz irradiation. A full self-contained model, which involves only the nominal parameters of the sample, agrees quantitatively with a wide range of experiments.

11 pages 5 figures

References in corpus (2)

• Electrically tunable GHz oscillations in doped GaAs-AlAs superlattices
• Current-voltage characteristic and stability in resonant-tunneling n-doped semiconductor superlattices

Cited by in corpus (9)

• Photon-assisted transport in semiconductor nanostructures
• Semiconductor Superlattices: A model system for nonlinear transport
• Nonequilibrium Green's function theory for transport and gain properties of quantum cascade structures
• Scattering Theory of Photon-Assisted Electron Transport
• Intersubband gain in a Bloch oscillator and Quantum cascade laser
• Current responsivity of semiconductor superlattice THz-photon detectors
• Superlattice nonlinearities for Gigahertz-Terahertz generation in harmonic multipliers
• Energetics of microwaves probed by double quantum dot absorption
• Nonequilibrium thermodynamics of interacting tunneling transport: variational grand potential, density-functional formulation, and nature of steady-state forces