Microscopic modelling of perpendicular electronic transport in doped multiple quantum wells
arXiv:cond-mat/9610120 · doi:10.1088/0031-8949/1997/T69/070
Abstract
We present a microscopic calculation of transport in strongly doped superlattices where domain formation is likely to occur. Our theoretical method is based on a current formula involving the spectral functions of the system, and thus allows, in principle, a systematic investigation of various interaction mechanisms. Taking into account impurity scattering and optical phonons we obtain a good quantitative agreement with existing experimental data from Helgesen and Finstad (J. Appl. Phys. 69, 2689, (1991)). Furthermore the calculated spectral functions indicate a significant increase of the average intersubband spacing compared to the bare level differences which might explain the experimental trend.
10 pages 5 figures
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Cited by in corpus (8)
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