paper

Generalized -- model: parameters and single-particle spectrum for electrons and holes in copper oxides

arXiv:cond-mat/9605155 · doi:10.1103/PhysRevB.53.335

Abstract

A microscopically based Hamiltonian of the generalized -- model is presented. Two types of the additional -terms are discussed. The set of ranges of the additional -terms for the real CuO planes is derived from the three-band model calculations. Using the variational spin-polaron approach the single-carrier dispersions in the generalized -- model are calculated both for the hole- and electron-doped systems. Hole and electron band minima are found to be at points , , and , respectively. The band minima shifts are not small (). Bandwidths for both cases of doping are found to be times larger than the t-J model ones.

10 pages, RevTeX. 6 postscript figures are appended