Single hole dispersion relation for the real CuO plane
arXiv:cond-mat/9605154 · doi:10.1103/PhysRevB.54.14914
Abstract
Dispersion relation for the CuO hole is calculated basing on the {\it generalized} -- model, recently derived from the three-band one. Numerical ranges for all model parameters, , , , and three-site terms , have been strongly justified previously. Physical reasons for their values are also discussed. Self-consistent Born approximation is used for the calculation of the hole dispersion. An excellent agreement between calculated and one obtained from the angle-resolved photoemission experiments is found.
3 pages, 2 figures, misprints corrected, wrong figure 2 replaced