paper

Raman Response in Doped Antiferromagnets

arXiv:cond-mat/9601136 · doi:10.1103/PhysRevB.53.15095

Abstract

The resonant part of the electronic Raman scattering response is calculated within the model on a planar lattice as a function of temperature and hole doping, using a finite-temperature diagonalization method for small systems. Results, directly applicable to experiments on cuprates, reveal on doping a very pronounced increase of the width of the two-magnon Raman peak, accompanied by a decrease of the total intensity. At the same time the peak position does not shift substantially in the underdoped regime.

11 pages revtex, 3 postscript figures. Minor corrections and changes from previous version, to be published in Phys. Rev. B

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