Electron Localization in a 2D System with Random Magnetic Flux
arXiv:cond-mat/9409033 · doi:10.1103/PhysRevB.52.5858
Abstract
Using a finite-size scaling method, we calculate the localization properties of a disordered two-dimensional electron system in the presence of a random magnetic field. Below a critical energy all states are localized and the localization length diverges when the Fermi energy approaches the critical energy, {\it i.e.} . We find that shifts with the strength of the disorder and the amplitude of the random magnetic field while the critical exponent () remains unchanged indicating universality in this system. Implications on the experiment in half-filling fractional quantum Hall system are also discussed.
4 pages, RevTex 3.0, 5 figures(PS files available upon request), #phd11
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- Effect of Long Range Disorder on Electron Motion in Two Dimensions
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- On a Network Model of Localization in a Random Magnetic Field
- Synthetic Random Flux Model in a periodically-driven optical lattice
- Hidden degree of freedom and critical states in a two-dimensional electron gas in the presence of a random magnetic field
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- In-plane Magnetic Field Induced Kosterlitz-Thouless Type Metal Insulator Transition in Coupled Double Quantum Wells
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- Spinless particle in rapidly fluctuating random magnetic field
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