Critical Exponents for the Metal--Insulator Transition in Disordered Systems
arXiv:cond-mat/9312024 · doi:10.1088/0953-8984/6/13/012
Abstract
Non-standard .sty file `equations.sty' now included inline. The critical exponents of the metal--insulator transition in disordered systems have been the subject of much published work containing often contradictory results. Values ranging between $\half$ and can be found even in the recent literature. In this paper the results of a long term study of the transition are presented. The data have been calculated with sufficient accuracy (0.2\%) that the calculated exponent can be quoted as with confidence. The reasons for the previous scatter of results is discussed.
8 pages + figures, LaTeX
Cited by in corpus (36)
- Experimental observation of the Anderson transition with atomic matter waves
- Corrections to scaling at the Anderson transition
- Electronic Transport in DNA
- The Anderson transition: time reversal symmetry and universality
- Observation of the Anderson Metal-Insulator Transition with Atomic Matter Waves: Theory and Experiment
- Reconciling Conductance Fluctuations and the Scaling Theory of Localization
- Relation between Energy Level Statistics and Phase Transition and its Application to the Anderson Model
- Does a magnetic field modify the critical behaviour at the metal-insulator transition in 3-dimensional disordered systems?
- Unifying the Anderson Transitions in Hermitian and Non-Hermitian Systems
- Crossover from critical orthogonal to critical unitary statistics at the Anderson transition
- Transfer matrix study of the Anderson transition in non-Hermitian systems
- Critical regime of two dimensional Ando model: relation between critical conductance and fractal dimension of electronic eigenstates
- Monitoring the localization-delocalization transition within a 1D model with non-random long-range interaction
- Microscopic derivation of self-consistent equations of Anderson localization in a disordered medium of finite size
- Anderson universality in a model of disordered phonons
- Effects of Scale-Free Disorder on the Anderson Metal-Insulator Transition
- Theory for magnetic-field-driven 3D metal-insulator transitions in the quantum limit
- Scaling of level-statistics and critical exponent of disordered two-dimensional symplectic systems
- Finite Cluster Typical Medium Theory for Disordered Electronic Systems
- Critical parameters for the disorder-induced metal-insulator transition in FCC and BCC lattices
- Tight-binding modeling of charge migration in DNA devices
- Localization-delocalization transition for disordered cubic harmonic lattices
- Scaling and localization lengths of a topologically disordered system
- Anderson transition and mobility edges on hyperbolic lattices with randomly connected boundaries
- Sequence Dependence of Electronic Transport in DNA
- Metal-insulator transition in three dimensional Anderson model: universal scaling of higher Lyapunov exponents
- Universality classes of the Anderson transitions driven by quasiperiodic potential in the three-dimensional Wigner-Dyson symmetry classes
- Electronic transport and localization in short and long DNA
- Finite-size scaling from self-consistent theory of localization
- Study of the localization-delocalization transition for phonons via transfer matrix method techniques
- 3D Network Model for Strong Topological Insulator Transitions
- The metal--insulator transition in disordered systems: a new approach to the critical behaviour
- Boundary hopping and the mobility edge in the Anderson model in three dimensions
- Mobility Edge and Level Statistics of Random Tight-Binding Hamiltonians
- Comment on the paper I. M. Suslov: Finite Size Scaling from the Self Consistent Theory of Localization
- Anderson localization: a density matrix approach